• 姓名：樊帅伟

• 职称：副教授

• 毕业院校：华中科技大学

• 学历： 研究生

• 学位： 博士

• 所在单位：最全菠菜网

• 学科： 物理学

• 办公地点： L1640

• 联系方式：18671713752

• 电子邮箱：phyfsw@ctgu.edu.cn

   

• 个人简介：（300-500字）

副教授、博士、硕士生导师，2009年毕业于华中科技大学物最全菠菜网凝聚态物理专业，获理学博士学位。主要讲授课程《计算物理》、《热学》和《大学物理》等；

主要从事新型功能材料的设计理论研究，研究领域如下：

1）二维材料、磁性材料、半金属材料的设计研究；

2）缺陷对半导体材料电子结构、磁、光和电学性质调控研究；

3）宽禁带半导体的透明导电性研究

已在Applied Physics Letters，Applied Surface Science，J. Phys. Chem. C，Journal of Applied Physics等学术期刊发表相关领域的研究论文五十余篇。

• 主持/参与的科研项目：

1.主持完成国家自然科学基金《非金属元素掺杂的半导体材料磁性及其机制的研究》。项目编号：11174179

2. 主持完成湖北省自然科学基金《缺陷对二维单层半导体材料性质影响研究》项目编号：2017CFB527

• 学术论文：

  [1]S. W. Fan, Y. Chen and L. Yang, Transparency and p-Type Conductivity of BeSe Doped with Group VA Atoms: A Hybrid Functional Study, J. Phys. Chem. C 126, 19446-19454 (2022).

  [2]Y. Chen, S. W. Fan and P. Xu, Defect induced ambipolar conductivity in wide-bandgap semiconductor SrS: Theoretical perspectives, Appl. Phys. Lett. 121, 252102 (2022).

  [3]S. W. Fan and Y. Chen, The electronic structures and p-type performance of group IA and VA atoms in NiO: A first principles study, J. Appl. Phys. 131, 135701 (2022).

  [4]Y. Chen, S. W. Fan and G. Y. Gao, Design ambipolar conductivity on wide-gap semiconductors: The case of Al- and Na-doped CaS, Mater. Sci. Semicond. Process. 151, 107024 (2022).

  [5]Y. Chen, et al., Promising transparency and p-type conductivity of Li, Na, K and Rb-doped CaS: A first-principles study, Mater. Sci. Eng.: B 285, 115953 (2022).

  [6]Y. Chen, S. W. Fan and G. Y. Gao, The SrS doped with Cl and K: a promising ambipolar semiconductor for transparent electronics application, J. Phys. D: Appl. Phys. 55, 455108 (2022).

  [7]S. W. Fan, et al., The origin of the P-type conductivity for Cu and Ag-doped NiO: Density functional theory study, Mater. Today Commun. 33, 104552 (2022).

  [8]Z. Wang, et al., Monolayer Mo₂B: A non-magnetic metal and potential application as anode material for ion batteries and catalyst for hydrogen evolution, Appl. Surf. Sci. 538, 148026 (2021).

  [9]Z. L. Wang and S. W. Fan, Beryllium sulfur doped with N, Li and Na: Promising p-type transparent semiconductor, Mater. Today Commun. 28, 102513 (2021).

  [10]S. Fan, et al., The effects of native defects and carbon dopant on AlP nanosheet, Comput. Mater. Sci. 173, 109458 (2020).

  [11]S. W. Fan, et al., Boron: An effective dopant for aluminum phosphide, EPL 122, 67007 (2018).

  [12]S. W. Fan, X. N. Huang and K. L. Yao, Boron doped GaN and InN: Potential candidates for spintronics, J. Appl. Phys. 121, 073905 (2017).

  [13]S. Fan, et al., Magnetism and electronic structures for B-doped bulk and surface AlN: Ab initio calculations, Appl. Phys. Express 8, 045802 (2015).

  [14]S. W. Fan, et al., Half-metallic ferromagnetism in wurtzite ScM (M=C, Si, Ge, and Sn): Ab initio calculations, Appl. Phys. Lett. 102, 022404 (2013).

  [15]S. W. Fan, K. L. Yao and Z. L. Liu, Half-metallic ferromagnetism in C-doped ZnS: Density functional calculations, Appl. Phys. Lett. 94, 152506 (2009).