姓名：胡功伟

职称：讲师

毕业院校：电子科技大学

学历：博士研究生

学位：理学博士

所在单位：最全菠菜网

学科：半导体器件物理，凝聚态物理

办公地点：理科楼L1610

电子邮箱：gwhu@ctgu.edu.cn

个人简介：

胡功伟，男，博士，讲师，2014年本科毕业于菠菜资源平台大全 电子信息工程专业，2017年硕士毕业于兰州大学 理论物理专业，2021年博士毕业于电子科技大学 物理学专业，硕博导师张岩教授，2022年在广州大学从事学术访问工作，2023年入职最全菠菜网，加入湖北省弱磁探测工程技术研究中心团队，近年来，主要从事第三代半导体中的压电电子学和挠曲电效应的基础研究，以及高性能、高灵敏度、低功耗、高频率和高速率量子传感器件设计，另外，在半导体材料中的拓扑相变、自旋轨道耦合、电荷及自旋输运、光电探测等方面也开展大量的前沿工作，截止到目前已在ACS Nano、Nano Energy、Small、Physical Review Applied等国际知名期刊上发表SCI论文30余篇，受邀担任多种国际重要学术期刊审稿人。

目前，我们的课题小组刚刚成立，共有多名研究生和本科生，正在不断吸纳新的成员加入，课题组长期与多个高校团队之间保持着密切合作关系，欢迎有兴趣的同学前来咨询，欢迎硕士研究生加入我们的研究团队，同时也鼓励对物理感兴趣的本科生们加入，在大学期间接触科研工作将是一件非常有意义的活动。

需要注意的是：成绩不是唯一标准，英语也不是必要条件，兴趣才是第一驱动力，另外还需要有端正的态度，认真努力、团结协作、敢想敢干！

主持/参与的科研项目

2023.07 ~ 2026.06，菠菜资源平台大全高层次人才科研启动基金（授予号：2023RCKJ0035），经费7万，主持

2019.12 ~ 2024.09，超低能耗装配式建筑纳米发电机模块与隔热相变材料应用(授予号：191006)，经费500万，参研

2019.07 ~ 2022.06，低功耗高性能机器学习算法研究（授予号：190461），经费40万，参研

2020.01 ~ 2022.12，自驱动可穿戴脑感知材料与器件（授予号：2020JDJQ0026），经费50万，参研

荣誉获奖

攻读博士研究生期间曾获得多项荣誉和奖励，包括四川省和电子科技大学优秀毕业生，2018年和2020年分别荣获博士研究生国家奖学金各一次、2019年“五粮液奖学金”、2018-2020连续三年获得学业一等奖学金，荣获电子科技大学物最全菠菜网最高荣誉“物理荣誉员工”和“优博”等称号。

研究方向

1、高性能应力传感器件设计和光电探测应用（理论 + 实验）

2、压电电子学和挠曲电电子学，包括纳米线、半导体硅和二维材料（理论 + 实验）

3、纤锌矿拓扑量子材料，包括拓扑绝缘体、自旋轨道耦合、自旋输运等（理论）

学术论文

1. Gongwei Hu, Fobao Huang *, Wei Huang*. Layer engineering piezotronic effect in two-dimensional homojunction transistors. Nano Energy, 2023, 117: 108880.

2. Gongwei Hu*, Fobao Huang, Jun-Feng Liu*. Ultrasensitive Strain Sensor Based on a Tunnel Junction with an AlN/Ga N Core-Shell Nanowire. Physical Review Applied, 2023, 19(1): 014066.

3. Xin Xue, Fobao Huang, Gongwei Hu*. Spin polarization in quantum point contact based on wurtzite topological quantum well. Physical Chemistry Chemical Physics, 2023, 25(38): 26164-26171.

4. Gongwei Hu*, Fobao Huang, Jun-Feng Liu*. Piezoelectric manipulation of spin–orbit coupling in a Wurtzite heterostructure. Physical Chemistry Chemical Physics, 2023, 25(34): 23001-23011.

5. Minjiang Dan, Gongwei Hu, Lijie Li*, Yan Zhang*. High performance quantum piezotronic tunneling transistor based on edge states of MoS2 nanoribbon. Nano Energy, 2022, 98: 107275.

6. Changming Xie, Minjiang Dan, Gongwei Hu, Nian Liu, Yan Zhang*. Piezo-phototronic spin laser based on wurtzite quantum wells. Nano Energy, 2022, 96: 107100.

7. Nian Liu, Minjiang Dan, Gongwei Hu, Yan Zhang*. Piezo-phototronic intersubband terahertz devices based on layer-dependent van der Waals quantum well. Nano Energy, 2022, 94: 106912.

8. Minjiang Dan, Gongwei Hu, Nian Liu, Yan Zhang*. Effect of strain-induced polarization field on band structure of MoS2 nanoribbon[C]//Journal of Physics: Conference Series. IOP Publishing, 2022, 2230(1): 012022.

9. Mandun Fu, Minjiang Dan, Gongwei Hu, Lijie Li*, Yan Zhang*. Polarization-induced ultrahigh Rashba spin-orbit interaction in ZnO/CdO quantum well. Nano Energy, 2021, 88: 106310.

10. Gongwei Hu, Minjiang Dan, Yan Zhang*. Polarization Field on Edge States of Single-layered MoS2[C]//Journal of Physics: Conference Series. IOP Publishing, 2021, 2002(1): 012053.

11. Yuankai Zhou, Yuncheng Jiang, Minjiang Dan, Gongwei Hu, Lijie Li*, Yan Zhang*. Edge-state transport in circular quantum point contact quantum piezotronic transistors. Nano Energy, 2021, 85: 106002.

12. Minjiang Dan, Gongwei Hu, Jiaheng Nie, Lijie Li*, Yan Zhang*. High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well. Small, 2021, 17(13): 2008106.

13. Gongwei Hu, Yan Zhang*. Quantum piezotronic devices based on ZnO/CdO quantum well topological insulator. Nano Energy, 2020, 77: 105154.

14. Gyan Michael, Yaming Zhang, Jiaheng Nie, Dongqi Zheng, Gongwei Hu, Ruhao Liu, Minjiang Dan, Lijie Li*, Yan Zhang*. High-performance piezo-phototronic multijunction solar cells based on single-type two-dimensional materials. Nano Energy, 2020, 76: 105091.

15. Ruhao Liu, Gongwei Hu, Minjiang Dan, Yaming Zhang, Lijie Li*, Yan Zhang*. Piezotronic spin and valley transistors based on monolayer MoS2. Nano Energy, 2020, 72: 104678.

16. Ke Wang, Gongwei Hu, Ruhao Liu, Yaming Zhang, Minjiang Dan, Lijie Li*, Yan Zhang*. Polarization-driven edge-state transport in transition-metal dichalcogenides. Physical Review Applied, 2020, 13(5): 054074.

17. Xin Cui, Yaming Zhang, Gongwei Hu, Lu Zhang, Yan Zhang*. Dynamical charge transfer model for high surface charge density triboelectric nanogenerators. Nano Energy, 2020, 70: 104513.

18. Nian Liu, Gongwei Hu, Minjiang Dan, Ruhao Liu, Yaming Zhang, Lijie Li*, Yan Zhang*. Piezo-phototronic effect on quantum well terahertz photodetector for continuously modulating wavelength. Nano Energy, 2019, 65: 104091.

19. Yaming Zhang, Gongwei Hu, Yan Zhang*, Lucy Li, Morten Willatzen*, Zhong Lin Wang*. High performance piezotronic devices based on non-uniform strain. Nano Energy, 2019, 60: 649-655.

20. Xin Guo, Gongwei Hu, Yaming Zhang, Ruhao Liu, Minjiang Dan, Lijie Li*, Yan Zhang*. Quantum information memory based on reconfigurable topological insulators by piezotronic effect. Nano Energy, 2019, 60: 36-42.

21. Gongwei Hu, Lijie Li*, Yan Zhang*. Two-dimensional electron gas in piezotronic devices. Nano Energy, 2019, 59: 667-673.

22. Gyan Michael, Gongwei Hu, Dongqi Zheng, Yan Zhang*. Piezo-phototronic solar cell based on 2D monochalcogenides materials. Journal of Physics D: Applied Physics, 2019, 52(20): 204001.

23. Ping Zhu, Ziming Zhao, Jiaheng Nie, Gongwei Hu, Lijie Li*, Yan Zhang*. Ultra-high sensitivity strain sensor based on piezotronic bipolar transistor. Nano Energy, 2018, 50: 744-749.

24. Minjiang Dan, Gongwei Hu, Lijie Li*, Yan Zhang*. High performance piezotronic logic nanodevices based on GaN/InN/GaN topological insulator. Nano Energy, 2018, 50: 544-551.

25. Jiaheng Nie, Gongwei Hu, Lijie Li*, Yan Zhang*. Piezotronic analog-to-digital converters based on strain-gated transistors. Nano energy, 2018, 46: 423-427.

26. Gongwei Hu, Yan Zhang*, Lijie Li, Zhong Lin Wang*. Piezotronic transistor based on topological insulators. ACS Nano, 2018, 12(1): 779-785.

27. Gongwei Hu, Yujing Zhang, Lu Luo, Yang Yang, Yan Zhang, Zhong Lin Wang. Piezotronic transistors in nonlinear circuit: Model and simulation. Science China Technological Sciences, 2015, 58: 1348-1354.